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2SA965 Datasheet Preview

2SA965 Datasheet

PNP Transistor

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SA965 TRANSISTOR (PNP)
FEATURES
z Complementary to 2SC2235
z Power Amplifier Applications
TO – 92M
TO – 92MOD
1. COLLECTOR
1. EMITTER
2. BASE
2. COLLECTOR
3. EMITTER
3. BASE
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-120
-120
-5
-0.8
900
139
150
-55~+150
Unit
V
V
V
A
mW
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC=-1mA,IE=0
-120
V
V(BR)CEO IC=-10mA,IB=0
-120
V
V(BR)EBO IE=-1mA,IC=0
-5
V
ICBO VCB=-120V,IE=0
-0.1 μA
IEBO VEB=-5V,IC=0
-0.1 μA
hFE VCE=-5V, IC-100mA
80
240
VCE(sat)
IC=-500mA,IB=-50mA
-1 V
VBE VCE=-5V, IC=-0.5A
-1 V
Cob VCB=-10V,IE=0, f=1MHz
40 pF
fT VCE=-5V,IC=-100mA
120 MHz
CLASSIFICATION OF hFE
RANK
RANGE
O
80-160
Y
120-240
A,Dec,2010


Part Number 2SA965
Description PNP Transistor
Maker JCET
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2SA965 Datasheet PDF






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