Full PDF Text Transcription for 2SD1815 (Reference)
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2SD1815. For precise diagrams, and layout, please refer to the original PDF.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1815 TRANSISTOR (NPN) FEATURES z Low Collector-to-Emitter Saturation Volta...
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TRANSISTOR (NPN) FEATURES z Low Collector-to-Emitter Saturation Voltage z Excllent Linearity of hFE z High fT z Fast Switching Time MAXIMUM RATINGS (Ta=25℃ unless otherwise note) Symbol Parameter Value VCBO Collector-Base Voltage 120 VCEO Collector-Emitter Voltage 100 VEBO Emitter-Base Voltage 6 IC Collector Current -Continuous 3 PC Collector Power Dissipation 1 TJ Junction Temperature 150 Tstg Storage Temperature -55 to +150 Unit V V V A W ℃ ℃ TO-252-2L 1. BASE 2. COLLECTOR 3.
2SD1815 Datasheet
