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SMD Type
High-Current Switching Applications 2SD1815
TO-252
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low collector-to-emitter saturation voltage. Excllent linearity of hFE.
+0.2 9.70 -0.2
+0.15 1.50 -0.15
6.50 +0.2 5.30-0.2
+0.15 -0.15
Fast switching time.
+0.1 0.80-0.1
+0.15 0.50 -0.15
High fT.
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 120 100 6 3 6 1 150 -55 to +150 Unit V V V A A W
3 .8 0
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