JCET 2SD1815
NPN Transistor
FEATURES
z Low Collector-to-Emitter Saturation Voltage z Excllent Linearity of hFE z High fT z Fast Switching TimeMAXIMUM RATINGS
(Ta=25℃ unless otherwise note) Symbol Parameter Value VCBO Collector-Base Voltage 120 VCEO Collector-Emitter Voltage 100 VEBO Emitter-Base Voltage 6 IC Collector Current -Continuous 3 PC Collector Power Dissipation 1 TJ Junction Temperature 150 Tstg Storage Temperature -55 to +150 Unit V V V A W ℃ ℃ TO-252-2L 1. BASE 2. COLLECTOR 3. EMITTERELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base -emitter saturation voltage Transition frequency Collector output capacitance Turn-on t