3DD13002S Datasheet, transistor equivalent, JCET

3DD13002S Features and benefits

3DD13002S Application

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3DD13002 - High Voltage Fast Switching NPN Power Transistor (GME)
Production specification High Voltage Fast Switching NPN Power Transistor 3DD13002 FEATURES  High speed switching.  Small flat package. Pb Lead-f.

3DD13002B - Switch Mode NPN Transistors (Weitron Technology)
3DD13002B Switch Mode NPN Transistors TO-92 www..com 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating .

3DD13002B1 - Silicon NPN Transistor (Huajing Microelectronics)
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3DD13002B1-7 - Silicon NPN Transistor (Huajing Microelectronics)
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3DD13002B1-H - Silicon NPN bipolar transistor (Huajing Microelectronics)
NPN 3DD13002 B1-H ○R 3DD13002 B1-H NPN ， ， ， 、。 ● ● ● ● ● ● ● ● -10℃～40℃ 1 265℃ ＜85％ VCEO IC Ptot （Ta=25℃） 450 0.5 0.

3DD13002E - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (JILIN SINO-MICROELECTRONICS)
R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13002E IC VCEO PC(TO-126) MAIN CHARACTERISTICS 0.8A 400V 20W Package z z z z z .

3DD13002N46 - NPN Transistor (JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002N46 TRANSISTOR（NPN） TO-92 FEATURE 3ower 6witching.

3DD13002R6 - NPN Transistor (Huajing Microelectronics)
1 3DD13002R6 NPN 3DD13002R6 2 2.1 2.2 TO-126 Tamb= 25 - Ta=25 Tc=25 VCE0 200 V VCB0 350 V VEB0 9 V IC 1 A 1.0 Ptot 18 W Tj 150 .

3DD13002RUD - Silicon NPN Transistor (Huajing Microelectronics)
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3DD13001 - High Voltage Fast Switching NPN Power Transistor (GME)
Production specification High Voltage Fast Switching NPN Power Transistor 3DD13001 FEATURES  PC=350mW(Mounted on ceramic substrate). Pb  High sp.