3DD13003F
3DD13003F is NPN Transistor manufactured by JCET.
FEATURE
Power Switching Applications
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
1. BASE 2. COLLECTOR
VCBO VCEO VEBO IC PC RθJA
TJ, Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation Thermal Resistance from Junction to Ambient Junction and Storage Temperature
700 V 400 V
9V 1.5 A 2W
62.5 ℃/W
-55~+150 ℃
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
I=c= 5m A,IE 0
Collector-emitter breakdown voltage Emitter-base breakdown voltage
V(BR)CEO V(BR)EBO
Ic== 10m A,IB 0 =IE= 2m A, IC 0
400 9
Collector cut-off current
ICBO
=VCB=700V,IE...
