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BF821 Datasheet Preview

BF821 Datasheet

PNP Transistor

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BF821/BF823 TRANSISTOR (PNP)
SOT-23
FEATURES
z Low current (max.-50 mA)
z High voltage (max.-300V)
z Telephony and professional communication equipment.
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: BF821:1W, BF823: 1Y
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Collector-Base Voltage
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
BF821
BF823
BF821
BF823
Value
-300
-250
-300
-250
-5
-50
0.25
150
-55~150
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Unit
V
V
V
mA
W
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Test conditions
IC=-100μA, IE=0
IC=-1mA, IB=0
IE= -100μA, IC=0
BF821
BF823
BF821
BF823
Min
-300
-250
-300
-250
-5
ICBO VCB=-200V,IE=0
IEBO VEB= -5V,IC=0
hFE VCE= -20V,IC=-25mA
50
VCE(sat)
IC=-30mA,IB= -5mA
fT VCE=-10V, IC= -10mA,f=100MHz
60
Cob VCB=-30V,IE=0,f=1MHz
Max
-0.01
-0.05
-0.8
1.6
Unit
V
V
V
μA
μA
V
MHz
pF
A,May,2011


Part Number BF821
Description PNP Transistor
Maker JCET
Total Page 1 Pages
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