CJAB25N03 Description
N-Channel Power MOSFET RDS(on)MAX ID 10mΩ@10V 14mΩ@4.5V 25A PDFNWB3.3×3.3-8L The CJAB25N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
CJAB25N03 Key Features
- Battery switch
- Load switch
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- High density cell design for ultra low RDS(ON)
- Fully characterized avalanche voltage and
- Special process technology for high ESD capability