CJAC10H03 - N-Channel MOSFET

JCET

General Description

The CJAC10H03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

High density cell design for ultra low RDS(ON).
Fully characterized avalanche voltage and.
Excellent package for good heat dissipation.
Special process technology for high ESD current.
Good stability and uniformity with high EAS.

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CJAC10H03 n-channel mosfet by JCET - Datasheet Preview

Datasheet Details

Part number	CJAC10H03
Manufacturer	JCET
File Size	1.18 MB
Description	N-Channel MOSFET
Datasheet	CJAC10H03 Datasheet

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Full PDF Text Transcription for CJAC10H03 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CJAC10H03. For precise diagrams, tables, and layout, please refer to the original PDF.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5×6-8L Plastic-Encapsulate MOSFETS CJAC10H03 V(BR)DSS 30 V N-Channel Power MOSFET RDS(on)MAX ID 2.5mΩ@10V 3.5mΩ@4...

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3 V(BR)DSS 30 V N-Channel Power MOSFET RDS(on)MAX ID 2.5mΩ@10V 3.5mΩ@4.5V 100A PDFNWB5×6-8L DESCRIPTION The CJAC10H03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.