CJAC35N03 mosfet equivalent, n-channel mosfet.
* High density cell design for ultra low RDS(ON)
* Fully characterized avalanche voltage and
current
* Good stability and uniformity with high EAS APPLICATIO.
FEATURES
* High density cell design for ultra low RDS(ON)
* Fully characterized avalanche voltage and
current <.
The CJAC35N03 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
FEATURES
* High density cell design for ultra low RDS(ON)
* Fully characterized aval.
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