CJAC35N03 - N-Channel MOSFET

JCET

General Description

to provide excellent RDS(ON) with low gate charge.

Key Features

High density cell design for ultra low RDS(ON).
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.

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CJAC35N03 n-channel mosfet by JCET - Datasheet Preview

Datasheet Details

Part number	CJAC35N03
Manufacturer	JCET
File Size	1.16 MB
Description	N-Channel MOSFET
Datasheet	CJAC35N03 Datasheet

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Full PDF Text Transcription for CJAC35N03 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CJAC35N03. For precise diagrams, tables, and layout, please refer to the original PDF.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD PDFN:%5×6-8L Plastic-Encapsulate MOSFETS CJAC35N03 V(BR)DSS 30 V N-Channel Power MOSFET RDS(on)MAX ID 7mΩ@10V 12mΩ@4.5V...

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3 V(BR)DSS 30 V N-Channel Power MOSFET RDS(on)MAX ID 7mΩ@10V 12mΩ@4.5V 35A PDFN:%5×6-8L DESCRIPTION The CJAC35N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES  High density cell design for ultra low RDS(ON)  Fully characterized avalanche voltage and current  Good stability and uniformity with high EAS APPLICATIONS  Excellent package for good heat dissipation  Special process technology for high ESD capability  High side switch in POL DC/DC converter MARKING CJAC35N03 = Part No.