CJAC20N10 mosfet equivalent, n-channel mosfet.
High density cell design for ultra low RDS(on)
Special process technology for high ESD capability
Fully characterized avalanche voltage and current
Excellent package .
such as power supplies, converters, power motor controls and bridge circuits. FEATURES
High density cell design for ult.
This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time.
Desighed for high voltage, high speed switching app.
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