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CJAC20N10 - N-Channel MOSFET

General Description

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode fast recovery time.

Key Features

  • High density cell design for ultra low RDS(on) Special process technology for high ESD capability Fully characterized avalanche voltage and current Excellent package for good heat dissipation Good stability and uniformity with high EAS.

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Datasheet Details

Part number CJAC20N10
Manufacturer JCET
File Size 795.40 KB
Description N-Channel MOSFET
Datasheet download datasheet CJAC20N10 Datasheet

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Full PDF Text Transcription for CJAC20N10 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CJAC20N10. For precise diagrams, tables, and layout, please refer to the original PDF.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5X6-8L Plastic-Encapsulate MOSFETS CJAC20N10 N-Channel Power MOSFET V(BR)DSS 10 9 RDS(on)MAX 31Pȍ#9 40Pȍ#9 ...

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0 N-Channel Power MOSFET V(BR)DSS 10 9 RDS(on)MAX 31Pȍ#9 40Pȍ#9 ID 20$ PDFNWB5×6-8L DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.