CJP15H03 Datasheet, JCET

z High density cell design for ultra low RDS(ON) z Fully characterized Avalanche voltage and current z Good stability and uniformity with high EAS APPLICATIONS z Power sw.

1. GATE 2. DRAIN 3. SOURCE FEATURES z High density cell design for ultra low RDS(ON) z Fully characterized Avalanche .

TO-220-3L-C The CJP15H03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. 1. GATE 2. DRAIN 3. SOURCE FEATURES z High density cell design for ultra low.