CJP12N60
CJP12N60 is N-Channel MOSFET manufactured by JCET.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate MOSFETS
CJP12N60 600V N-Channel Power MOSFET
General Description This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withistand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply.
TO-220
1. GATE 2. DRAIN 3. SOURCE
FEATURE z Low Crss z Fast switching z Improved dv/dt capability
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Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Single Pulsed Avalanche Energy (note1) Power Dissipation Thermal Resistance from Junction to Ambient Operating Temperature Storage Temperature
Symbol
VDS VGS ID EAS PD RθJA TJ TSTG
Value 600 ±30 12 790
2 62.5 150 -55 ~+150
Unit V A m J W
℃
A,Dec,2010
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
Drain-source diode forward...
