CJP15H03 Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP15H03 N-Channel Power MOSFET DESCRIPTION TO-220-3L-C The CJP15H03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. 1. GATE 2. DRAIN 3. SOURCE Features z High density cell design for ultra low RDS(ON) z Fully characterized Avalanche voltage and current z Good stability and uniformity with high EAS APPLICATIONS z Power switching application z Hard switched and high frequency circuits z Excellent package for good heat dissipation z Special process technology for high ESD capability z Uninterruptible Power Supply EQUIVALENT CIRCUIT MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Drain-Source Voltage Parameter Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy Power Dissipation Thermal Resistance from Junction to Ambient Junction...