CJP12N65 Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS V(BR)DSS 650V N-Channel Power MOSFET RDS(on)MAX 0.85Ω@10V 12A TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. 1. GATE 2. DRAIN 3. SOURCE FEATURE z High Current Rating z Lower RDS(on) z Low Reverse Transfer Capacitance z Fast Switching Capability z Tighter VSD Specifications z Avalanche Energy Specified MARKING Equivalent Circuit CJP12N65= Device code Solid dot = Green molding pound device, if none, the normal device XXX= Date Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(note1) Single Pulsed Avalanche Energy (note2) Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Maximum lead temperature for soldering purposes , 1/8”from case for 5 seconds Symbol VDS VGSS ID IDM EAS RθJA TJ TSTG .cj-elec. Value 650 ±30 12 48 540 62.5 150 -55 ~+150 Unit V A m J ℃/W ℃ D,Feb,2016 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Symbol Test Condition Off characteristics Drain-source breakdown...