CJP50N06 mosfet equivalent, n-channel mosfet.
FEATURE z High density cell design for ultra low Rdson z Fully characterized avalanche voltage and current z Good stabi.
The CJP50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURE z High density cell design for ultra low Rdson z Fully characterized avalanche voltag.
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