CJP55H12
CJP55H12 is N-Channel MOSFET manufactured by JCET.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L-C Plastic-Encapsulate MOSFETS
CJP55H12 N-Channel Power MOSFET
TO-220-3L-C
GENERAL DESCRIPTION The CJP55H12 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
FEATURE
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
1. GATE 2. DRAIN 3. SOURCE
APPLICATION
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy (note1) Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Maximum Lead Temperure for Soldering Purposes , 1/8”from Case for 5 Seconds
Symbol VDS VGS ID IDM EAS RθJA TJ TSTG
Value 55 ±20 120 420
1100 62.5 150 -55 ~+150
Unit V
A m J ℃/W
℃
.cj-elec.
A-3,Mar,2015
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol...
