CJP50N06 Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS V(BR)DSS 60V N-Channel Power MOSFET RDS(on)MAX   20mΩ@10V 50A TO-220-3L-C   GENERAL DESCRIPTION The CJP50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURE z High density cell design for ultra low Rdson z Fully characterized avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation z Special process technology for high ESD capability APPLICATION z Power switching application z Hard switched and high frequency circuits z Uninterruptible power supply 1. GATE 2. DRAIN 3. SOURCE MARKING EQUIVALENT CIRCUIT CJP50N06 XXX GD S CJP50N06= Device code Solid dot = Green molding pound device, if none, the normal device XXX=Date Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-So...