Datasheet Details
| Part number | CJP55H12 |
|---|---|
| Manufacturer | JCET |
| File Size | 374.56 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 CJP55H12-JCET.pdf
|
| Part number | CJP55H12 |
|---|---|
| Manufacturer | JCET |
| File Size | 374.56 KB |
| Description | N-Channel MOSFET |
| Datasheet |
CJP55H12-JCET.pdf
|
The CJP55H12 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.FEATURE High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability 1. GATE 2. DRAIN 3. SOURCE APPLICATION Power switching applica
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