CJP80N03 Datasheet, JCET

1. GATE 2. DRAIN 3. SOURCE 123 z High density cell design for ultra low RDS(ON) z Fully characterized Avalanche voltage and current z Excellent package for good heat .

FEATURES 1. GATE 2. DRAIN 3. SOURCE 123 z High density cell design for ultra low RDS(ON) z Fully characterized Avala.

The CJP80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES 1. GATE 2. DRAIN 3. SOURCE 123 z High density cell design for ultra low RDS(ON) z.