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CJP80N04 - N-Channel Power MOSFET

Description

to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

1.

Features

  • z High density cell design for ultra low RDS(ON) z Fully characterized Avalanche voltage and current z Good stability and uniformity with high EAS.

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Datasheet Details

Part number CJP80N04
Manufacturer JCET
File Size 589.60 KB
Description N-Channel Power MOSFET
Datasheet download datasheet CJP80N04 Datasheet

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP80N04 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID   7mΩ@10V  40 V 80A 20mΩ@4.5V   DESCRIPTION The CJP80N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. TO-220-3L-C 1. GATE 2. DRAIN 3.
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