CJP80N04 mosfet equivalent, n-channel power mosfet.
z High density cell design for ultra low RDS(ON)
z Fully characterized Avalanche voltage and current
z Good stability and uniformity with high EAS
APPLICATIONS
z Power sw.
TO-220-3L-C
1. GATE 2. DRAIN
3. SOURCE
123
FEATURES z High density cell design for ultra low RDS(ON)
z Fully charac.
The CJP80N04 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
TO-220-3L-C
1. GATE 2. DRAIN
3. SOURCE
123
FEATURES z High density cell design for ultra .
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