CJPF55P30 mosfet equivalent, p-channel mosfet.
z High density cell design for ultra low RDS(ON)
z Fully characterized avalanche voltage and current
z Good stability and uniformity with high EAS z Excellent package f.
1. GATE 2. DRAIN 3. SOURCE
FEATURES
z High density cell design for ultra low RDS(ON)
z Fully characterized avalanche.
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