Datasheet Details
| Part number | CJQ6601 |
|---|---|
| Manufacturer | JCET |
| File Size | 1.44 MB |
| Description | N-channel and P-channel Complementary MOSFETS |
| Download | CJQ6601 Download (PDF) |
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|
| Part number | CJQ6601 |
|---|---|
| Manufacturer | JCET |
| File Size | 1.44 MB |
| Description | N-channel and P-channel Complementary MOSFETS |
| Download | CJQ6601 Download (PDF) |
|
|
|
S The Device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ6601 N-channel and P-channel Complementary MOSFETS V(BR)DSS 30 V -30V RDS(on)MAX 35mΩ@10V 40mΩ@4.5V 52mΩ@2.5V 65mΩ@-10V 75mΩ@-4.5V 90mΩ@-2.5V ID 5.8 A -4.
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