2N7002M Datasheet | Jiangsu Changjiang Electronics

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate MOSFET DESCRIPTION High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. 1. GATE 2. SOURCE 3. DRAIN MOSFET( N-Channel ) WBFBP-03B (1.2×1.2×0.5) unit: mm BACK Features High density cell...