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2N7002M - MOSFET

General Description

High cell density, DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A.

Key Features

  • High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.

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Datasheet Details

Part number 2N7002M
Manufacturer Jiangsu Changjiang Electronics
File Size 280.31 KB
Description MOSFET
Datasheet download datasheet 2N7002M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate MOSFET 2N7002M DESCRIPTION High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. 1. GATE 2. SOURCE 3. DRAIN MOSFET( N-Channel ) D WBFBP-03B (1.2×1.2×0.5) unit: mm TOP G D S BACK S G FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable.