2N7002M Overview
High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A.
2N7002M Key Features
- Forward Tran conductance- Diode Forward Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol
- Pulse test , pulse width≤300µs, duty cycle≤2% . SWITCHING TIME
