2N7002M Key Features
- Forward Tran conductance- Diode Forward Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol
- Pulse test , pulse width≤300µs, duty cycle≤2% . SWITCHING TIME
- Part: 2N7002M
- Manufacturer: Jiangsu Changjiang Electronics
- Size: 280.31 KB
Other 2N7002M Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild |
2N7002MTF | N-Channel MOSFET |
Vishay |
2N7002 | N-Channel 60V MOSFET |
|
Fairchild |
2N7002 | N-channel FET |
Galaxy Microelectronics |
2N7002 | N-Channel Power Mosfet |
Nexperia |
2N7002 | 300mA N-channel MOSFET |
2N7002M Description
High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A.