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2N7002 300mA N-channel MOSFET

2N7002 Description

2N7002 60 V, 300 mA N-channel Trench MOSFET Rev.7 * 8 September 2011 Product data sheet 1.Product profile 1.1 General .
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology. Suitabl.

2N7002 Features

* Suitable for logic level gate drive sources
* Very fast switching
* Surface-mounted package

2N7002 Applications

* Logic level translators
* High-speed line drivers 1.4 Quick reference data Table 1. Symbol VDS ID Quick reference data Parameter drain-source voltage drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Conditions 25 °C ≤ Tj ≤ 15

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300mA N-channel MOSFET nexperia
nexperia 2N7002-like datasheet