2N7002 N-Channel Power Mosfet

GME

Description

Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002 .

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Datasheet Specifications

Part number: 2N7002
Manufacturer: GME
File Size: 297.36 KB
Datasheet: 2N7002-GME.pdf
Description: N-Channel Power Mosfet

Features

* High Density Cell Design For Low Pb RDS(ON). Lead-free
* Voltage Controlled Small Signal Switch.
* Rugged and Reliable.
* High Saturation Current Capability.

Applications

* N-channel enhancement mode effect transistor.
* Switching application. SOT-23 ORDERING INFORMATION Type No. Marking 2N7002 7002 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS VDGR VGSS ID PD RθJA Drain-Source voltage 60 D

2N7002 Distributors

📁 Related Datasheet

2N7002-01 2N7002-G 2N7002-HF 2N7002A 2N7002AQ 2N7002B

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2N7002 N-Channel Power Mosfet GME

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