BAW56C
BAW56C is SILICON EPITAXIAL PLANAR DIODE manufactured by KEC.
FEATURES
Small Package : SOT-23(1).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage Continuous Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range
VRM VR IF IFSM PD Tj Tstg
85 80 200 2 225- 150 -55 150
- Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
UNIT V V m A A m W
SILICON EPITAXIAL PLANAR DIODE
E L BL
23 1
M 1. CATHODE 1 2. CATHODE 2 3. ANODE
DIM MILLIMETERS A 2.90+_ 0.1 B 1.30+0.20/-0.15 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 J 0.10 K 0.00 ~ 0.10 L 0.55 M 0.20 MIN N 1.00+0.20/-0.10
SOT-23(1)
Marking
H6CType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Forward Voltage
Reverse Current Total Capacitance
VR VF(1) VF(2) VF(3)
IR CT
TEST CONDITION IR=100u A IF=1m A IF=10m A IF=150m A VR=80V VR=0, f=1MHz
MIN. 80
- TYP. 0.6
- MAX.
- 0.65 0.8 1.25 0.5 3
UNIT V
A p...
