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BAW56C Datasheet Preview

BAW56C Datasheet

SILICON EPITAXIAL PLANAR DIODE

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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package : SOT-23(1).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
Continuous Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
VRM
VR
IF
IFSM
PD
Tj
Tstg
85
80
200
2
225*
150
-55 150
* Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
UNIT
V
V
mA
A
mW
BAW56C
SILICON EPITAXIAL PLANAR DIODE
E
L BL
23
1
M
1. CATHODE 1
2. CATHODE 2
3. ANODE
DIM MILLIMETERS
A 2.90+_ 0.1
B 1.30+0.20/-0.15
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
G 1.90
J 0.10
K 0.00 ~ 0.10
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
3
21
SOT-23(1)
Marking
H6CType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Forward Voltage
Reverse Current
Total Capacitance
VR
VF(1)
VF(2)
VF(3)
IR
CT
TEST CONDITION
IR=100uA
IF=1mA
IF=10mA
IF=150mA
VR=80V
VR=0, f=1MHz
MIN.
80
-
-
-
-
-
TYP.
-
0.6
0.72
-
-
-
MAX.
-
0.65
0.8
1.25
0.5
3
UNIT
V
V
A
pF
2015. 5. 12
Revision No : 0
1/2




KEC

BAW56C Datasheet Preview

BAW56C Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

BAW56C
IF - VF
10 3
10 2
10
1
-1
10
-2
10
0
0.2 0.4 0.6 0.8 1.0
FORWARD VOLTAGE VF (V)
1.2
2.5
2.0
1.5
1.0
0.5
0
0.2
CT - VR
f=1MHz
Ta=25 C
1
3 10
30 100 200
REVERSE VOLTAGE VR (V)
I R - VR
10
Ta=100 C
1
Ta=75 C
-1
10
Ta=50 C
-2 Ta=25 C
10
10-3
0
20 40 60 80
REVERSE VOLTAGE VR (V)
2015. 5. 12
Revision No : 0
2/2


Part Number BAW56C
Description SILICON EPITAXIAL PLANAR DIODE
Maker KEC
PDF Download

BAW56C Datasheet PDF






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