SEMICONDUCTOR
TECHNICAL DATA
HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : VF=0.25(Typ.) @IF=5mA
Small Package : ESM.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Operating Temperature Range
* : Unit Rating. Total Rating=Unit Rating 1.5
VRM
VR
IFM
IO
IFSM
PD
Tj
Tstg
Topr
RATING
15
10
100 *
50 *
1*
100
125
-55 125
-40 100
UNIT
V
V
mA
mA
A
mW
KDR331E
SCHOTTKY BARRIER TYPE DIODE
E
B
DIM MILLIMETERS
A 1.60+_ 0.10
2 D B 0.85+_ 0.10
13
C 0.70+_ 0.10
D 0.27+0.10/-0.05
E 1.60+_ 0.10
G 1.00+_ 0.10
H 0.50
J 0.13+_ 0.05
J
1. ANODE 1
2. ANODE 2
3. CATHODE
3
21
ESM
Marking
Type Name
UW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
VF(1)
VF(2)
VF(3)
IR
Total Capacitance
CT
TEST CONDITION
IF=1mA
IF=5mA
IF=50mA
VR=10V
VR=0V, f=1MHz
MIN.
-
-
-
-
-
TYP.
0.21
0.25
0.35
-
13
MAX.
-
0.30
0.50
20
40
UNIT
V
A
pF
2000. 11. 3
Revision No : 0
1/2
