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SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES Low Forward Voltage : VF(3)=0.43V(Typ.) Low Reverse Current : IR=5 (Max.) Small Package : USC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature
VRM
45 V
VR 40 V
IFM 200 mA
IO 100 mA
IFSM
1A
PD 200* mW
Tj 125
Storage Temperature Range
Tstg -55 125
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
KDR357
SCHOTTKY BARRIER TYPE DIODE
CATHODE MARK E A K
F L
B 1
2 D
MM 1. ANODE 2. CATHODE
G
H
J C I
DIM MILLIMETERS A 2.50+_ 0.2 B 1.25+_ 0.05 C 0.90+_ 0.05 D 0.30 +_ 0.06 E 1.70 +_ 0.05 F 0.27 +_ 0.10 G 0.
KDR357 Datasheet
