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SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES Low Forward Voltage : VF(2)=0.23V (Typ.) Small Package : USC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
VRM
15
Reverse Voltage
VR
10
Maximum (Peak) Forward Current
IFM
200
Average Forward Current
IO
100
Surge Current (10ms)
IFSM
1
Power Dissipation
PD
200*
Junction Temperature
Tj
125
Storage Temperature Range
Tstg
-55 125
* : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm.
UNIT V V mA mA A mW
CATHODE MARK E A K
F L
KDR367
SCHOTTKY BARRIER TYPE DIODE
B
G
1
H
2 D
M
M
1. ANODE 2. CATHODE
J C
I
DIM MILLIMETERS
A
2.50 +_ 0.1
B
1.25+_ 0.05
C
0.90 +_0.05
D 0.30+0.06/-0.04
E
1.70 +_ 0.05
F
MIN 0.17
G
0.
KDR367 Datasheet
