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SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES Low Forward Voltage : VF=0.54V (Typ.). Low Reverse Current : IR=5 A (Max.). Small Package : USM.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VRM VR IFM IO PD Tj Tstg
RATING 45 40 300 100 100 125
-55 125
UNIT V V mA mA mW
C L
A J G
KDR322
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE
E MB
M
2 13
NK
N
1. N.C 2. ANODE 3. CATHODE
DIM MILLIMETERS
DA B
2.00+_ 0.20 1.25 +_ 0.15
C 0.90 +_ 0.10
D 0.3+0.10/-0.05 E 2.10 +_ 0.20
G 0.65 H 0.15+0.1/-0.06
J 1.30
K 0.00-0.10
L 0.70 H M 0.42+_ 0.10
N 0.
KDR322 Datasheet
