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SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES Low Forward Voltage : VF(2)=0.23V (Typ.) Small Package : ESC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
VRM
20
Reverse Voltage
VR
20
Maximum (Peak) Forward Current
IFM
200
Average Forward Current
IO
100
Surge Current (10ms)
IFSM
1
Power Dissipation
PD
150*
Junction Temperature
Tj
125
Storage Temperature Range
Tstg
-55 125
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
UNIT V V mA mA A mW
CATHODE MARK B A
KDR368E
SCHOTTKY BARRIER TYPE DIODE
C 1
2 D
1. ANODE 2. CATHODE
E
F
DIM A B C D E F
MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.
KDR368E Datasheet
