The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES Low Forward Voltage : VF(2)=0.23V (Typ.) Small Package : ESC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
VRM
20
Reverse Voltage
VR
20
Maximum (Peak) Forward Current
IFM
200
Average Forward Current
IO
100
Surge Current (10ms)
IFSM
1
Power Dissipation
PD
150*
Junction Temperature
Tj
125
Storage Temperature Range
Tstg
-55 125
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
UNIT V V mA mA A mW
CATHODE MARK B A
KDR368E
SCHOTTKY BARRIER TYPE DIODE
C 1
2 D
1. ANODE 2. CATHODE
E
F
DIM A B C D E F
MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.
KDR368E Datasheet
