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SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES Low Forward Voltage : VF(2)=0.23V (Typ.) Small Package : ESC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage
VRM VR
15 10
Maximum (Peak) Forward Current
IFM 200
Average Forward Current
IO 100
Surge Current (10ms)
IFSM
1
Power Dissipation
PD 150*
Junction Temperature
Tj 125
Storage Temperature Range
Tstg -55 125
* : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm.
UNIT V V mA mA A mW
CATHODE MARK B A
GG
KDR367E
SCHOTTKY BARRIER TYPE DIODE
C 1
2 D
1. ANODE 2. CATHODE
E
F
DIM A B C D E F G
MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.
KDR367E Datasheet
