KDR367E
KDR367E is SCHOTTKY BARRIER TYPE DIODE manufactured by KEC.
SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
Features
Low Forward Voltage : VF(2)=0.23V (Typ.) Small Package : ESC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage
VRM VR
15 10
Maximum (Peak) Forward Current
IFM 200
Average Forward Current
IO 100
Surge Current (10ms)
IFSM
Power Dissipation
PD 150-
Junction Temperature
Tj 125
Storage Temperature Range
Tstg -55 125
- : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm.
UNIT V V mA mA A mW
CATHODE MARK B A
SCHOTTKY BARRIER TYPE DIODE
C 1
2 D
1. ANODE 2....
