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KEC

KDR367E Datasheet Preview

KDR367E Datasheet

SCHOTTKY BARRIER TYPE DIODE

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SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : VF(2)=0.23V (Typ.)
Small Package : ESC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
VRM
VR
15
10
Maximum (Peak) Forward Current
IFM 200
Average Forward Current
IO 100
Surge Current (10ms)
IFSM
1
Power Dissipation
PD 150*
Junction Temperature
Tj 125
Storage Temperature Range
Tstg -55 125
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
UNIT
V
V
mA
mA
A
mW
KDR367E
SCHOTTKY BARRIER TYPE DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
G
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
0.20+_ 0.10
ESC
Marking
Type Name
US
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
VF(1)
VF(2)
VF(3)
IR
Total Capacitance
CT
TEST CONDITION
IF=1mA
IF=5mA
IF=100mA
VR=10V
VR=0V, f=1MHz
MIN.
-
-
-
-
-
TYP.
0.18
0.23
0.35
-
20
MAX.
-
0.30
0.50
20
40
UNIT
V
A
pF
2014. 3. 31
Revision No : 2
1/2




KEC

KDR367E Datasheet Preview

KDR367E Datasheet

SCHOTTKY BARRIER TYPE DIODE

No Preview Available !

KDR367E
100m
IF - VF
10m
1m
100µ
10µ
0
0.1 0.2 0.3 0.4
FORWARD VOLTAGE VF (V)
0.5
CT - VR
40
f=1MHz
Ta=25 C
30
20
10
0
10m 30m 0.1 0.3 1
3 10 20
REVERSE VOLTAGE VR (R)
1m
100µ
10µ
1µ
100n
10n
0
IR - VR
Ta=100 C
Ta=75 C
Ta=50 C
Ta=25 C
Ta=0 C
Ta=-25 C
2 4 6 8 10
REVERSE VOLTAGE VR (V)
P - Ta
240
Mounted on a glass
200
epoxy circuit board
of 20`20mm, pad
dimension 4`4mm.
160
120
80
40
0
50 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ( C)
2014. 3. 31
Revision No : 2
2/2


Part Number KDR367E
Description SCHOTTKY BARRIER TYPE DIODE
Maker KEC
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KDR367E Datasheet PDF






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