900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






KEC

KDV258E Datasheet Preview

KDV258E Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
High Capacitance Ratio : C1V/C4V =2.0(Min.)
Low Series Resistance : rs=0.45 (Max.)
KDV258E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
CE
1
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Junction Temperature
VR
Tj
Storage Temperature Range
Tstg
RATING
15
150
-55 150
UNIT
V
2
D
1. ANODE
2. CATHODE
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60+_ 0.10
1.20+_ 0.10
0.80+_ 0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Reverse Current
IR
Capacitance
C1V
C4V
Capacitance Ratio
K
Series Resistance
rS
TEST CONDITION
IR=1 A
VR=10V
VR=1V, f=1MHz
VR=4V, f=1MHz
-
VR=1V, f=470MHz
MIN.
15
-
19.0
8.5
2.0
-
TYP.
-
-
-
-
-
-
MAX.
-
10
21.0
10.0
-
0.45
UNIT
V
nA
pF
Marking
Type Name
U6
2003. 3. 25
Revision No : 0
1/2




KEC

KDV258E Datasheet Preview

KDV258E Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

KDV258E
1K
Ta=25 C
IR - VR
100
10
0 2 4 6 8 10 12 14 16
REVERSE VOLTAGE VR (V)
C - VR
100
f=1MHz
Ta=25 C
10
1
0 5 10 15 20
REVERSE VOLTAGE VR (V)
2003. 3. 25
Revision No : 0
2/2


Part Number KDV258E
Description SILICON EPITAXIAL PLANAR DIODE
Maker KEC
Total Page 2 Pages
PDF Download

KDV258E Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 KDV258 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
KEC(Korea Electronics)
2 KDV258E SILICON EPITAXIAL PLANAR DIODE
KEC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy