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KEC

KDV269E Datasheet Preview

KDV269E Datasheet

SILICON EPITAXIAL PLANAR DIODE

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SEMICONDUCTOR
TECHNICAL DATA
CATV TUNING.
FEATURES
High Capacitance Ratio : C2V/C25V=11.0(Min.)
Low Series Resistance : rS=0.75 (Max.)
Excellent C-V Characteristics, and Small Tracking Error.
Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Junction Temperature
VR
Tj
Storage Temperature Range
Tstg
RATING
34
125
-55 125
UNIT
V
KDV269E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
G
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
0.20+_ 0.10
ESC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
IR
Capacitance
C2V
Capacitance
C25V
Capacitance Ratio
C2V/C25V
Series Resistance
rS
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.) 0.02
C(Min.)
(VR=2~25V)
TEST CONDITION
VR=28V
VR=2V, f=1MHz
VR=25V, f=1MHz
VR=5V, f=470MHz
MIN.
-
29
2.5
11.0
-
TYP.
-
31.5
2.75
11.5
-
MAX.
10
34
2.9
-
0.75
UNIT
nA
pF
pF
-
Marking
Type Name
UR
2014. 3. 31
Revision No : 3
1/2




KEC

KDV269E Datasheet Preview

KDV269E Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

KDV269E
-9
10
-10
10
-11
10
-12
10
-13
10
0
IR - VR
10 20 30
REVERSE VOLTAGE VR (V)
40
C T - VR
60
f=1MHz
40
20
0
1 10 50
REVERSE VOLTAGE VR (V)
0.8
0.6
0.4
0.2
0
1
r s - VR
f=470MHz
10
REVERSE VOLTAGE VR (V)
50
(LOG CT) / (LOG VR) - VR
0
-1
-2
-3
1 10 50
REVERSE VOLTAGE VR (V)
2014. 3. 31
Revision No : 3
2/2


Part Number KDV269E
Description SILICON EPITAXIAL PLANAR DIODE
Maker KEC
Total Page 2 Pages
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