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KEC

KDV273E Datasheet Preview

KDV273E Datasheet

SILICON EPITAXIAL PLANAR DIODE

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SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
High Capacitance Ratio : C1V/C4V =2.0(Typ.)
Low Series Resistance : rs=0.39 (Typ.)
KDV273E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Junction Temperature
VR
Tj
Storage Temperature Range
Tstg
RATING
10
150
-55 150
UNIT
V
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Reverse Current
IR
Capacitance
C1V
C4V
Capacitance Ratio
K
Series Resistance
rS
TEST CONDITION
IR=1 A
VR=10V
VR=1V, f=1MHz
VR=4V, f=1MHz
-
VR=1V, f=470MHz
MIN.
10
-
15
7.3
1.8
-
TYP.
-
-
16
8.0
2.0
0.39
MAX.
-
10
17
8.7
-
0.5
UNIT
V
nA
pF
2014. 3. 31
Revision No : 2
1/2




KEC

KDV273E Datasheet Preview

KDV273E Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

KDV273E
2014. 3. 31
Revision No : 2
2/2


Part Number KDV273E
Description SILICON EPITAXIAL PLANAR DIODE
Maker KEC
Total Page 2 Pages
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