KDV275E
KDV275E is VARIABLE CAPACITANCE DIODE manufactured by KEC.
SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
Features
High Capacitance Ratio : C1V/C4V =3.4(Min.) Low Series Resistance Excellent Linearity (CV Curve)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature Storage Temperature Range
VR Tj Tstg
RATING 28 150
-55 150
UNIT V
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK B A
C 1
2 D
1. ANODE 2. CATHODE
DIM A B C D E F
MILLIMETERS 1.60+_ 0.10 1.20+_ 0.10 0.80+_ 0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Reverse Current
Capacitance
VR IR C1V C2V C4V
Capacitance Ratio
Series Resistance r S
TEST CONDITION
IR=10 A VR=16V VR=1V, f=1MHz VR=2V, f=1MHz VR=4V, f=1MHz C1V/C4V, f=1MHz CT=8p F,...
