KDV275
KDV275 is VARIABLE CAPACITANCE DIODE manufactured by KEC.
SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
Features
High Capacitance Ratio : C1V/C4V =3.4(Min.) Low Series Resistance Excellent Linearity (CV Curve)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature Storage Temperature Range
VR Tj Tstg
RATING 28 150
-55 150
UNIT V
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK E A K
B 1
2 D
MM 1. ANODE 2. CATHODE
DIM MILLIMETERS A 2.50+_ 0.1 B 1.25+_ 0.05 C 0.90+_ 0.05 D 0.30+0.06/-0.04 E 1.70+_ 0.05 F MIN 0.17 G 0.126+_ 0.03 H 0~0.1 I 1.0 MAX J 0.15+_ 0.05 K 0.4+_ 0.05 L 2 +4/-2 M 4~6
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Reverse Current
Capacitance
VR IR C1V C2V C4V
Capacitance Ratio
Series Resistance r S
TEST CONDITION
IR=10 A VR=16V VR=1V, f=1MHz VR=2V, f=1MHz VR=4V, f=1MHz C1V/C4V, f=1MHz CT=8p F, f=470MHz
MIN....
