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SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES High Capacitance Ratio : C1V/C4V =3.4(Min.) Low Series Resistance Excellent Linearity (CV Curve)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature Storage Temperature Range
VR Tj Tstg
RATING 28 150
-55 150
UNIT V
KDV275
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK E A K
F L
B 1
G
H
2 D
MM 1. ANODE 2. CATHODE
J C I
DIM MILLIMETERS A 2.50+_ 0.1 B 1.25+_ 0.05 C 0.90+_ 0.05 D 0.30+0.06/-0.04 E 1.70+_ 0.05 F MIN 0.17 G 0.126+_ 0.03 H 0~0.1 I 1.0 MAX J 0.15+_ 0.05 K 0.4+_ 0.
KDV275 Datasheet
