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SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES High Capacitance Ratio : C1V/C4V =2.0(Typ.) Low Series Resistance : rs=0.39 (Typ.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature
VR Tj
Storage Temperature Range
Tstg
RATING 10 150
-55 150
UNIT V
KDV273UL
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
C
A
B
H E
G E
H D 1. ANODE 2. CATHODE
DIM MILLIMETERS
A 1.0 +_ 0.05
B 0.6 +_ 0.05
C
0.36
+0.02 - 0.03
D 0.5 +_ 0.03
E 0.25 +_0.03
G 0.65+_ 0.03
H 0.05
ULP-2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Reverse Current
IR
Capacitance
C1V C4V
Capacitance Ratio
K
Series Resistance
rS
TEST CONDITION IR=1 A VR=10V VR=1V, f=1MHz VR=4V, f=1MHz
VR=1V, f=470MHz
MIN. 10 15 7.
KDV273UL Datasheet
