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KDV273E - Silicon Diode

Features

  • High Capacitance Ratio : C1V/C4V =2.0(Typ. ) Low Series Resistance : rs=0.39 (Typ. ) KDV273E.

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Datasheet Details

Part number KDV273E
Manufacturer KEC
File Size 524.12 KB
Description Silicon Diode
Datasheet download datasheet KDV273E Datasheet
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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =2.0(Typ.) Low Series Resistance : rs=0.39 (Typ.) KDV273E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 10 150 -55 150 UNIT V ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage VR Reverse Current IR Capacitance C1V C4V Capacitance Ratio K Series Resistance rS TEST CONDITION IR=1 A VR=10V VR=1V, f=1MHz VR=4V, f=1MHz VR=1V, f=470MHz MIN. 10 15 7.3 1.8 - TYP. 16 8.0 2.0 0.39 MAX. 10 17 8.7 0.5 UNIT V nA pF 2014. 3. 31 Revision No : 2 1/2 KDV273E 2014. 3.
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