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KEC

KDV275 Datasheet Preview

KDV275 Datasheet

VARIABLE CAPACITANCE DIODE

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SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
High Capacitance Ratio : C1V/C4V =3.4(Min.)
Low Series Resistance
Excellent Linearity (CV Curve)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Junction Temperature
Storage Temperature Range
VR
Tj
Tstg
RATING
28
150
-55 150
UNIT
V
KDV275
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
B
1
G
H
2
D
MM
1. ANODE
2. CATHODE
J
C
I
DIM MILLIMETERS
A 2.50+_ 0.1
B 1.25+_ 0.05
C 0.90+_ 0.05
D 0.30+0.06/-0.04
E 1.70+_ 0.05
F MIN 0.17
G 0.126+_ 0.03
H 0~0.1
I 1.0 MAX
J 0.15+_ 0.05
K 0.4+_ 0.05
L 2 +4/-2
M 4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Reverse Current
Capacitance
VR
IR
C1V
C2V
C4V
Capacitance Ratio
K
Series Resistance
rS
TEST CONDITION
IR=10 A
VR=16V
VR=1V, f=1MHz
VR=2V, f=1MHz
VR=4V, f=1MHz
C1V/C4V, f=1MHz
CT=8pF, f=470MHz
MIN.
20
-
15.40
8.50
3.60
3.4
-
TYP.
-
-
16.60
10.20
4.30
-
-
MAX.
-
5
17.90
11.90
5.05
-
0.7
UNIT
V
nA
pF
CLASSIFICATION OF CAPACITANCE GRADE
GRADE
CAPACITANCE (C2V)
A 8.5 9.15
B 9.05~9.85
C 9.75 10.65
D 10.55~11.35
E 11.25~11.90
UNIT
pF
pF
pF
pF
pF
Marking
Type Name
C
Grade
2003 1. 27
Revision No : 0
1/2




KEC

KDV275 Datasheet Preview

KDV275 Datasheet

VARIABLE CAPACITANCE DIODE

No Preview Available !

KDV275
C T - VR
30
Ta=25 C
f=1MHz
10
5
3
0
1 23
REVERSE VOLTAGE VR (V)
4
100p
10p
1p
100f
10f
0
IR - VR
Ta=85 C
Ta=55 C
Ta=25 C
4 8 12 16
REVERSE VOLTAGE VR (V)
20
Q - VR
500
300
f=50MHz
f=100MHz
100
50 f=300MHz
30
f=470MHz
10
0 1 2 34
REVERSE VOLTAGE VR (V)
1
V R =4V
Ta=25 C
0.7
rs - f
0.5
50
100 300 500
FREQUENCY f (MHz)
1K
1.10
1.06
1.02
0.98
0.94
0.90
0
C(Ta)/C(25 C) - VR
Ta=85 C
Ta=55 C
Ta=25 C
Ta=-15 C
Ta=-55 C
1 23
REVERSE VOLTAGE VR (V)
2003 1. 27
Revision No : 0
4
C/Ta - VR
3K
1k
500
300
100
0
Ta=-55 C~+85 C
f=1MHz
12 34
REVERSE VOLTAGE VR (V)
2/2


Part Number KDV275
Description VARIABLE CAPACITANCE DIODE
Maker KEC
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KDV275 Datasheet PDF






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