n channel mos field effect transistor.
VDSS(Min.)= 600V, ID= 5A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ.) =16nC
1 2 3
KF6N60D/I
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF6N60D
A C
K D L
B
H G F F
J
E N M
DIM.
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES
VD.
Image gallery
TAGS
Download (Size : 907.49KB)