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KEC

KF6N60D Datasheet Preview

KF6N60D Datasheet

N CHANNEL MOS FIELD EFFECT TRANSISTOR

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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS(Min.)= 600V, ID= 5A
RDS(ON)=1.4 (Max) @VGS =10V
Qg(typ.) =16nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
RATING
KF6N60D/I
600
30
5
3.15
15*
180
4
4.5
69.4
0.56
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
150
-55 150
Thermal Resistance, Junction-to-Case RthJC
Thermal Resistance, Junction-to-
Ambient
RthJA
* : Drain current limited by maximum junction temperature.
1.8
110
PIN CONNECTION
D
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
KF6N60D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF6N60D
A
CD
H
G
FF
B
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_ 0.20
C 5.34 +_ 0.30
D 0.70 +_ 0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_ 0.10
N 0.70 MIN
O 0.1 MAX
1 23
O
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
KF6N60I
AH
CJ
M
N
G
FF
123
P
L
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MILLIMETERS
6.6 +_ 0.2
6.1 +_ 0.2
5.34 +_0.3
0.7 +_ 0.2
9.3 +_0.3
2.3+_ 0.2
0.76 +_ 0.1
2.3 +_0.1
0.5+_ 0.1
1.8 +_ 0.2
0.5 +_ 0.1
1.0 +_ 0.1
0.96 MAX
1.02 +_ 0.3
IPAK(1)
G
S
2011. 7. 25
Revision No : 0
1/6




KEC

KF6N60D Datasheet Preview

KF6N60D Datasheet

N CHANNEL MOS FIELD EFFECT TRANSISTOR

No Preview Available !

KF6N60D/I
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=600V, VGS=0V,
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
Vth
IGSS
RDS(ON)
VDS=VGS, ID=250 A
VGS= 30V, VDS=0V
VGS=10V, ID=2.5A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=480V, ID=6A
VGS=10V
(Note4,5)
Qgd
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
td(on)
tr
td(off)
tf
Ciss
Coss
VDD=300V, ID=6A
RG=25
VGS=10V
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Crss
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
VGS<Vth
ISP
VSD IS=5A, VGS=0V
trr IS=6A, VGS=0V,
Qrr dIs/dt=100A/ s
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 13.5mH, IS=5A, VDD=50V, RG = 25 , Starting Tj = 25
Note 3) IS 6A, dI/dt 100A/ , VDD BVDSS, Starting Tj = 25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
600 - - V
- 0.6 - V/
- - 10 A
2.5 - 4.5 V
- - 100 nA
- 1.2 1.4
- 16 -
- 3.1 -
- 6.0 -
- 20 -
- 20 -
- 50 -
- 20 -
- 710 -
- 80 -
- 8.0 -
nC
ns
pF
- -6
A
- - 24
- - 1.4 V
- 390 -
ns
- 2.2 -
C
Marking
1
KF6N60
D 001
1
2
KF6N60
I 001
2
1 PRODUCT NAME
2 LOT NO
2011. 7. 25
Revision No : 0
2/6


Part Number KF6N60D
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Maker KEC
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KF6N60D Datasheet PDF





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