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KF6N60F - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Download the KF6N60F datasheet PDF (KF6N60P included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel mos field effect transistor.

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Features

  • VDSS(Min. )= 600V, ID= 6A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ. ) =16nC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KF6N60P-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KF6N60F
Manufacturer KEC
File Size 1.48 MB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF6N60F Datasheet

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 600V, ID= 6A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ.) =16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 SYMBOL VDSS VGSS ID RATING KF6N60P KF6N60F 600 30 6 6* 3.8 3.8* IDP 15 15* EAS 180 EAR 4 dv/dt 4.5 100 41.7 PD 0.8 0.
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