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KF6N60I - N CHANNEL MOS FIELD EFFECT TRANSISTOR

This page provides the datasheet information for the KF6N60I, a member of the KF6N60D N CHANNEL MOS FIELD EFFECT TRANSISTOR family.

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Features

  • VDSS(Min. )= 600V, ID= 5A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ. ) =16nC 1 2 3 KF6N60D/I N.

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Datasheet preview – KF6N60I

Datasheet Details

Part number KF6N60I
Manufacturer KEC
File Size 907.49 KB
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF6N60I Datasheet
Additional preview pages of the KF6N60I datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 600V, ID= 5A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ.) =16nC 1 2 3 KF6N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF6N60D A C K D L B H G F F J E N M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 K 2.30 + _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N 0.
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