KF6N60I transistor equivalent, n channel mos field effect transistor.
VDSS(Min.)= 600V, ID= 5A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ.) =16nC
1 2 3
KF6N60D/I
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF6N60D
A C
K D L
B
H G F F
J
E N M
DIM.
Image gallery
Download