KHB1D0N60D mosfet equivalent, n-channel mosfet.
VDSS= 600V, ID= 1.0A Drain-Source ON Resistance : RDS(ON)=12 @VGS = 10V Qg(typ.) = 5.9nC
K Q E H P F F L M O
DIM MILLIMETERS _ 0.2 6.6 + A _ 0.2 6.1 + B _ 0.3 5.34 + C .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
KHB1D0N60D.
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