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KHB1D0N60I - N-Channel MOSFET

This page provides the datasheet information for the KHB1D0N60I, a member of the KHB1D0N60D N-Channel MOSFET family.

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Features

  • VDSS= 600V, ID= 1.0A Drain-Source ON Resistance : RDS(ON)=12 @VGS = 10V Qg(typ. ) = 5.9nC K Q E H P F F L M O DIM.

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Datasheet preview – KHB1D0N60I

Datasheet Details

Part number KHB1D0N60I
Manufacturer KEC Corporation
File Size 86.47 KB
Description N-Channel MOSFET
Datasheet download datasheet KHB1D0N60I Datasheet
Additional preview pages of the KHB1D0N60I datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. KHB1D0N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com A C D I J B FEATURES VDSS= 600V, ID= 1.0A Drain-Source ON Resistance : RDS(ON)=12 @VGS = 10V Qg(typ.) = 5.9nC K Q E H P F F L M O DIM MILLIMETERS _ 0.2 6.6 + A _ 0.2 6.1 + B _ 0.3 5.34 + C _ 0.2 0.7 + D _ 0.2 2.7 + E _ 0.2 2.3 + F 0.96 MAX H _ 0.1 2.3 + I _ 0.1 0.5 + J 1.5 K _ 0.1 0.5 + L _ 0.1 M 0.8 + O 0.55 MIN _ 0.2 P 1.02 + _ 0.2 Q 0.8 + 1 2 3 1. GATE 2. DRAIN 3.
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