A H 2 G 1 3 VDSS=30V, ID=4A Drain-Source ON Resistance RDS(ON)=47m (Max.) @ VGS=10V RDS(ON)=65m (Max.) @ VGS=4.5V Super Hige Dense Cell Design P P DIM A B C D E G H.

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. L E B L FEATURES A H 2 G 1 3 VDSS=30.

KMB4D5DN60QA

KMB471

KMB471-101

KMB472

KMB472-065

KMB472-101

KMB472-103

KMB472-104

KMB472-113

KMB472-211

KMB472-301

KMB472-311

KMB472-951