KMB6D0DN30QA Key Features
- (note1)
- 1.6 Tj Tstg RthJA- -50~150 -50~150 78
- Surface Mounted on FR4 Board, t 10sec
- Upper electrical characteristics can be changed because these are tentative specifications
- Source Voltage VDS (V)
KMB6D0DN30QA is Trench MOSFET manufactured by KEC.
| Part Number | Description |
|---|---|
| KMB6D0DN30QB | Dual N-Channel MOSFET |
| KMB6D0DN35QB | Dual N-Channel MOSFET |
| KMB010P30QA | P-Channel Trench MOSFET |
| KMB012N30QA | N-Channel Trench MOSFET |
| KMB014P30QA | Trench MOSFET |
This planer stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.