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KEC

KTC3190 Datasheet Preview

KTC3190 Datasheet

EPITAXIAL PLANAR NPN TRANSISTOR

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SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
HF BAND AMPLIFIER APPLICATION.
FEATURE
Low Noise Figure : NF=3.5dB(Max.) (f=1MHz).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Storage Temperature Range
Tstg
RATING
35
30
4
100
-100
625
150
-55150
UNIT
V
V
V
mA
mA
mW
KTC3190
EPITAXIAL PLANAR NPN TRANSISTOR
BC
K
E
G
D
H
FF
1 23
N DIM MILLIMETERS
A 4.70 MAX
B 4.80 MAX
C 3.70 MAX
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
J 14.00 +_0.50
K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
VCB=20V, IE=0
Emitter Cut-off Current
IEBO
VEB=2V, IC=0
DC Current Gain
hFE(Note) VCE=12V, IC=2mA
Collector-Emitter Saturation Voltage
VCE(sat)
IC=10mA, IB=1mA
Base-Emitter Saturation Voltage
VBE(sat)
IC=10mA, IB=1mA
Transition Frequency
fT VCE=10V, IC=2mA
Reverse Transfer Capacitance
Cre VCB=10V, IE=0, f=1MHz
Collector-Base Time Constant
Noise Figure
Ccrbb
NF
VCE=10V, IE=-1mA, f=30MHz
VCE=10V, IC=1mA,
f=1MHz, Rg=50
Note : hFE Classification R:4080 , O:70140 , Y:120240
MIN.
-
-
40
-
-
80
-
-
TYP.
-
-
-
-
-
120
2.2
30
MAX.
0.1
1.0
240
0.4
1.0
-
3.0
50
UNIT
A
A
V
V
MHz
pF
pS
- 2.0 3.5 dB
1994. 6. 24
Revision No : 0
1/2




KEC

KTC3190 Datasheet Preview

KTC3190 Datasheet

EPITAXIAL PLANAR NPN TRANSISTOR

No Preview Available !

KTC3190
y PARAMETERS (Typ.) (COMMON EMITTER VCE=6V, IE=1mA, f=1MHz)
CHARACTERISTIC
SYMBOL KTC3190-R
Input Conductance
Input Capacitance
Output Conductance
Output Capacitance
Forward Transfer Admittance
gie 0.5
Cie 50
goe 4
Coe 3.7
|yfe| 36
Phase Angle of Forward Transfer Admittance
Reverse Transfer Admittance
fe -1.6
|yre| 14
Phase Angle of Reverse Transfer Admittance
re -90
KTC3190-O
0.35
48
5
3.4
36
-1.6
14
-90
KTC3190-Y
0.22
46
6.5
3.2
36
-1.6
14
-90
UNIT
mS
pF
S
pF
mS
S
yre - I E
100
COMMON EMITTER
VCE =6V
50 f=1MHz
Ta=25 C
30 θre =-90 C
10
0
-0.1
-0.3 -0.5 -1
-3
EMITTER CURRENT IE (mA)
-5
-30 300
-10 100
-5 50
-3 30
y fe , θ re - VCE
COMMON EMITTER
I E=-1mA
f=1MHz
Ta=25 C
y fe
θ fe
-1 10
-0.5 5
2 4 6 8 10 12 14 16
COLLECTOR-EMITTER VOLTAGE VCE (V)
yre - VCE
y
100 -10
COMMON EMITTER
50
I E=-1mA
f=1MHz
-5
30 Ta=25 C
θ re =-90
-3
10
5
3
2 4 6 8 10 12 14 16
COLLECTOR-EMITTER VOLTAGE V CE (V)
-1
-0.5
fe , θ fe - I E
100
COMMON EMITTER
VCE =6V
50
f=1MHz
Ta=25 C
30
y fe R, O, Y
θ fe R, O, Y
10
5
-0.1 -0.3 -0.5 -1
-3 -5
EMITTER CURRENT IE (mA)
1994. 6. 24
Revision No : 0
2/2


Part Number KTC3190
Description EPITAXIAL PLANAR NPN TRANSISTOR
Maker KEC
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KTC3190 Datasheet PDF






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